| 제조업체 |
부품명 |
데이터시트
Date
Size |
상세설명 |
Rohs
Pb Free
Lifecycle |
홈페이지 |
NXP Semiconductors
|
BAS85
|
|
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
compliant
yes
transferred |
|
|
BAS85 T/R
|
|
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
|
compliant
yes
active |
|
|
BAS85,115
|
|
BAS85 - Schottky barrier diode MELF 2-Pin
|
compliant
transferred |
|
Nexperia
|
BAS85,115
|
|
BAS85 - Schottky barrier diode MELF 2-Pin
|
active |
|
|
BAS85,115
|
|
BAS85 - Schottky barrier diode MELF 2-Pin
|
active |
|
NXP Semiconductors
|
BAS85,135
|
|
BAS85 - Schottky barrier diode MELF 2-Pin
|
compliant
transferred |
|
Nexperia
|
BAS85,135
|
|
BAS85 - Schottky barrier diode MELF 2-Pin
|
active |
|
|
BAS85,135
|
|
BAS85 - Schottky barrier diode MELF 2-Pin
|
active |
|
NXP Semiconductors
|
BAS85T/R
|
|
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
compliant
unknown
transferred |
|
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