제조업체 |
부품명 |
데이터시트 Date Size |
상세설명 |
Rohs Pb Free Lifecycle |
홈페이지 |
NXP Semiconductors
|
BAS35 T/R
|
|
General purpose controlled avalanche (double) diodes - Cd max.: 35 pF; Configuration: dual c.a. ; IF max: 250 mA; IFSM max: 10 A; IR max: 100@VR=90V nA; IFRM: 600 mA; trr max: 50 ns; VFmax:
|
compliant no active |
|
BAS35,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
compliant
transferred |
|
Nexperia
|
BAS35,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
active |
|
BAS35,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
active |
|
NXP Semiconductors
|
BAS35/B,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
transferred |
|
Nexperia
|
BAS35/B,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
obsolete |
|
BAS35/B,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
obsolete |
|
NXP Semiconductors
|
BAS35/DG,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
transferred |
|
Nexperia
|
BAS35/DG,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
obsolete |
|
BAS35/DG,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
obsolete |
|
NXP Semiconductors
|
BAS35/DG/B2,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
transferred |
|
Nexperia
|
BAS35/DG/B2,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
active |
|
BAS35/DG/B2,215
|
|
BAS29; BAS31; BAS35 - General purpose controlled avalanche (double) diodes TO-236 3-Pin
|
active |
|
NXP Semiconductors
|
BAS35T/R
|
|
DIODE 0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
|
compliant unknown transferred |
|